The insulated gate bipolar transistor (IGBT) & thyristor provide the advantage over metal-oxide-semiconductor field effect transistor (MOSFET) for minimum switching time and switching losses. They also use conduction losses along with high breakdown voltage in bipolar junction transistor (BJT) to achieve high electricity demands.

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By geography, North America is going to have high growth during the forecast period due to the growth attributed to the replacement of aging power infrastructure, particularly in developed economies such as US and the deployment of smart grids in the region increases the market growth.

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Some of the key players profiled in the IGBT & Thyristor Market include Infineon Technologies AG, Fuji Electric Co., Ltd., Mitsubishi Electric Corporation, ABB Ltd, Toshiba Corporation, Siemens AG, Schneider Electric, Littelfuse, Inc., ON Semiconductor, STMicroelectronics and Hitachi, Ltd.

What our report offers:
- Market share assessments for the regional and country-level segments
- Strategic recommendations for the new entrants
- Covers Market data for the years 2019, 2020, 2021, 2025, and 2028
- Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
- Strategic recommendations in key business segments based on the market estimations
- Competitive landscaping mapping the key common trends
- Company profiling with detailed strategies, financials, and recent developments
- Supply chain trends mapping the latest technological advancements

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